Enhancement of p-type doping of ZnSe using a modified „N¿Te...d -doping technique
نویسندگان
چکیده
Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped layers of N1Te were deposited for each d-doping cycle. An enhancement in the (NA2ND) level to 6310 18 cm has been achieved in ZnSe using this technique. The resultant layer has an average ZnTe content of only about 3%. This doping method shows potential for obtaining highly p-type doped ohmic contact layers without introducing significant lattice mismatch to ZnSe. Low-temperature photoluminescence spectra reveal some Te-related emissions. © 2000 American Institute of Physics. @S0003-6951~00!00816-0#
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